PL-02U Pressureless Sinter Copper Paste

PL-02U
PL-02U is a copper paste suitable for non-pressure sintering processes. It provides excellent conductivity, stable long-printing operation and dense sintered copper layers for reliable power device chip bonding.
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PL-02U Pressureless Sinter Copper Paste

A pressureless copper sinter paste for power semiconductor die attachment and thermal management, developed to provide conductive copper bonding without external sintering pressure.

>110 W/m·KThermal conductivity
<5×10⁻⁵ Ω·cmElectrical resistivity
≥30 MPaReference shear strength
PL-02U Pressureless Sinter Copper Paste
PL-02U Pressureless Sinter Copper Paste

Pressureless copper bonding for power semiconductor packages

PL-02U provides a copper-based pressureless bonding route for high-power devices. The material is intended for conductive die attachment and thermal management where nitrogen-controlled processing and a suitable heating profile are available.

01

Pressureless Copper Sintering

Designed to form a copper bond layer without applied sintering pressure.

02

High Thermal Conductivity

Specified thermal conductivity exceeds 110 W/m·K.

03

Low Electrical Resistivity

Specified resistivity is below 5×10⁻⁵ Ω·cm.

04

Strong Bonding

Reference shear strength is at least 30 MPa for the stated test condition.

05

Multiple Metallizations

Applicable to Ag, Au and Cu surfaces with process confirmation.

06

Nitrogen Processing

Nitrogen protection is required for the specified copper-sintering route.

Product Specifications

Technical data for engineering evaluation. Final process settings should be confirmed against the selected substrate, package dimensions and production equipment.

Recommended Use

Recommended for pressureless copper die attachment in power semiconductors and high-thermal-load modules. Use nitrogen and confirm the complete heating profile, bond area and substrate finish before production.

Product Name
PL-02U Pressureless Sinter Copper Paste
Material Type
Pressureless copper sinter paste
Solid Content
>80%
Thermal Conductivity
>110 W/m·K
Electrical Resistivity
<5×10⁻⁵ Ω·cm
Reference Shear Strength
≥30 MPa, 5×5 mm die, nitrogen atmosphere
Applicable Surfaces
Ag / Au / Cu
Work Life
8 hours
Storage Temperature
-10°C to 10°C
Shelf Life
3 months
Process Atmosphere
Nitrogen
Detailed Rheology / Packaging
Available upon request
Final Process Profile
Subject to die size, surface finish and equipment

Typical Applications

Application suitability should be confirmed against substrate finish, material dimensions, processing atmosphere and reliability requirements.

Application 01Power-Device Die Attach
Application 02Power Semiconductor Packages
Application 03High-Thermal Modules
Application 04Copper-Based Thermal Interfaces

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Send the metallization, die size, bond area and nitrogen-oven capability for material and profile confirmation.

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